Optimization of substrate pretreatment and deposition conditions for epitaxial growth of -FeSi film on Si(100)

Yamaguchi, Kenji; Hamamoto, Satoshi*; Hojo, Kiichi

Physica Status Solidi (C), 10(12), p.1699 - 1703, 2013/12

https://doi.org/10.1002/pssc.201300355

Effect of substrate treatment conditions, deposition temperature and deposition rate on the crystallinity of -FeSi films formed on Si substrate was investigated. The substrates were treated with Ne ion beams at room temperature and then annealed at 1073 K prior to film fabrication by means of ion beam sputter deposition (IBSD) method. Combinations of experimental parameters which promote the epitaxial relationship of -FeSi (100) // Si (100) were defined. Complicated dependence of these experimental parameters on the film structure indicated that careful optimization of substrate treatment conditions and deposition parameters would enable to obtain -FeSi films with excellent crystalline properties.

Ion beam analysis of quaternary Heusler alloy Co(MnFe)Si(111) epitaxially grown on Ge(111)

Kawakubo, Yuki*; Noguchi, Masaya*; Hirata, Tomoaki*; Narumi, Kazumasa; Sakai, Seiji; Yamada, Shinya*; Hamaya, Kohei*; Miyao, Masanobu*; Maeda, Yoshihito

Physica Status Solidi (C), 10(12), p.1828 - 1831, 2013/12

https://doi.org/10.1002/pssc.201300367